Publications by Jeremie%20Kim

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2018

Proceedings of the 24th International Symposium on High-Performance Computer Architecture (HPCA), Vienna, Austria, February 2018
Physically Unclonable Functions (PUFs) are commonly used in cryptography to identify devices based on the uniqueness of their physical microstructures. DRAM-based PUFs have numerous advantages over PUF designs that exploit alternative substrates: DRAM is a major component of many modern systems, and a DRAM-based PUF can generate many unique identifiers. However, none of the prior DRAM PUF proposals provide implementations suitable for runtime-accessible PUF evaluation on commodity DRAM devices. Prior DRAM PUFs exhibit unacceptably high latencies, especially at low temperatures (e.g., >125.8s on average for a 64KiB memory segment below 55◦C), and they cause high system interference by keeping part of DRAM unavailable during PUF evaluation. In this paper, we introduce the DRAM latency PUF, a new class of fast, reliable DRAM PUFs. The key idea is to reduce DRAM read access latency below the reliable datasheet specifications using software-only system calls. Doing so results in error patterns that reflect the compound effects of manufacturing variations in various DRAM structures (e.g., capacitors, wires, sense amplifiers). Based on a rigorous experimental characterization of 223 modern LPDDR4 DRAM chips, we demonstrate that these error patterns 1) satisfy runtime-accessible PUF requirements, and 2) are quickly generated (i.e., at 88.2ms) irrespective of operating temperature using a real system with no additional hardware modifications. We show that, for a constant DRAM capacity overhead of 64KiB, our implementation of the DRAM latency PUF enables an average (minimum, maximum) PUF evaluation time speedup of 152x (109x, 181x) at 70◦C and 1426x (868x, 1783x) at 55◦C when compared to a DRAM retention PUF and achieves greater speedups at even lower temperatures.
@inproceedings{abc,
	abstract = {Physically Unclonable Functions (PUFs) are commonly used in cryptography to identify devices based on the uniqueness of their physical microstructures. DRAM-based PUFs have numerous advantages over PUF designs that exploit alternative substrates: DRAM is a major component of many modern systems, and a DRAM-based PUF can generate many unique identifiers. However, none of the prior DRAM PUF proposals provide implementations suitable for runtime-accessible PUF evaluation on commodity DRAM devices. Prior DRAM PUFs exhibit unacceptably high latencies, especially at low temperatures (e.g., >125.8s on average for a 64KiB memory segment below 55{\textopenbullet}C), and they cause high system interference by keeping part of DRAM unavailable during PUF evaluation. In this paper, we introduce the DRAM latency PUF, a new class of fast, reliable DRAM PUFs. The key idea is to reduce DRAM read access latency below the reliable datasheet specifications using software-only system calls. Doing so results in error patterns that reflect the compound effects of manufacturing variations in various DRAM structures (e.g., capacitors, wires, sense amplifiers). Based on a rigorous experimental characterization of 223 modern LPDDR4 DRAM chips, we demonstrate that these error patterns 1) satisfy runtime-accessible PUF requirements, and 2) are quickly generated (i.e., at 88.2ms) irrespective of operating temperature using a real system with no additional hardware modifications. We show that, for a constant DRAM capacity overhead of 64KiB, our implementation of the DRAM latency PUF enables an average (minimum, maximum) PUF evaluation time speedup of 152x (109x, 181x) at 70{\textopenbullet}C and 1426x (868x, 1783x) at 55{\textopenbullet}C when compared to a DRAM retention PUF and achieves greater speedups at even lower temperatures.},
	author = {Jeremie Kim and Minesh Patel and Hasan Hassan and Onur Mutlu},
	booktitle = {Proceedings of the 24th International Symposium on High-Performance Computer Architecture (HPCA)},
	title = {The DRAM Latency PUF: Quickly Evaluating Physical Unclonable Functions by Exploiting the Latency-Reliability Tradeoff in Mod...},
	venue = {Vienna, Austria},
	year = {2018}
}

2017

Proceedings of the 50th Annual IEEE/ACM International Symposium on Microarchitecture, Cambridge, MA, USA, October 2017
Many important applications trigger bulk bitwise operations, i.e., bitwise operations on large bit vectors. In fact, recent works design techniques that exploit fast bulk bitwise operations to accelerate databases (bitmap indices, BitWeaving) and web search (BitFunnel). Unfortunately, in existing architectures, the throughput of bulk bitwise operations is limited by the memory bandwidth available to the processing unit (e.g., CPU, GPU, FPGA, processing-in-memory). To overcome this bottleneck, we propose Ambit, an Accelerator-in-Memory for bulk bitwise operations. Unlike prior works, Ambit exploits the analog operation of DRAM technology to perform bitwise operations completely inside DRAM, thereby exploiting the full internal DRAM bandwidth. Ambit consists of two components. First, simultaneous activation of three DRAM rows that share the same set of sense amplifiers enables the system to perform bitwise AND and OR operations. Second, with modest changes to the sense amplifier, the system can use the inverters present inside the sense amplifier to perform bitwise NOT operations. With these two components, Ambit can perform any bulk bitwise operation efficiently inside DRAM. Ambit largely exploits existing DRAM structure, and hence incurs low cost on top of commodity DRAM designs (1% of DRAM chip area). Importantly, Ambit uses the modern DRAM interface without any changes, and therefore it can be directly plugged onto the memory bus. Our extensive circuit simulations show that Ambit works as expected even in the presence of significant process variation. Averaged across seven bulk bitwise operations, Ambit improves performance by 32X and reduces energy consumption by 35X compared to state-of-the-art systems. When integrated with Hybrid Memory Cube (HMC), a 3D-stacked DRAM with a logic layer, Ambit improves performance of bulk bitwise operations by 9.7X compared to processing in the logic layer of the HMC. Ambit improves the performance of three real-world data-intensive applications, 1) database bitmap indices, 2) BitWeaving, a technique to accelerate database scans, and 3) bit-vector-based implementation of sets, by 3X-7X compared to a state-of-the-art baseline using SIMD optimizations. We describe four other applications that can benefit from Ambit, including a recent technique proposed to speed up web search. We believe that large performance and energy improvements provided by Ambit can enable other applications to use bulk bitwise operations.
@inproceedings{abc,
	abstract = {Many important applications trigger bulk bitwise operations, i.e., bitwise operations on large bit vectors. In fact, recent works design techniques that exploit fast bulk bitwise operations to accelerate databases (bitmap indices, BitWeaving) and web search (BitFunnel). Unfortunately, in existing architectures, the throughput of bulk bitwise operations is limited by the memory bandwidth available to the processing unit (e.g., CPU, GPU, FPGA, processing-in-memory).

To overcome this bottleneck, we propose Ambit, an Accelerator-in-Memory for bulk bitwise operations. Unlike prior works, Ambit exploits the analog operation of DRAM technology to perform bitwise operations completely inside DRAM, thereby exploiting the full internal DRAM bandwidth. Ambit consists of two components. First, simultaneous activation of three DRAM rows that share the same set of sense amplifiers enables the system to perform bitwise AND and OR operations. Second, with modest changes to the sense amplifier, the system can use the inverters present inside the sense amplifier to perform bitwise NOT operations. With these two components, Ambit can perform any bulk bitwise operation efficiently inside DRAM. Ambit largely exploits existing DRAM structure, and hence incurs low cost on top of commodity DRAM designs (1\% of DRAM chip area). Importantly, Ambit uses the modern DRAM interface without any changes, and therefore it can be directly plugged onto the memory bus.

Our extensive circuit simulations show that Ambit works as expected even in the presence of significant process variation. Averaged across seven bulk bitwise operations, Ambit improves performance by 32X and reduces energy consumption by 35X compared to state-of-the-art systems. When integrated with Hybrid Memory Cube (HMC), a 3D-stacked DRAM with a logic layer, Ambit improves performance of bulk bitwise operations by 9.7X compared to processing in the logic layer of the HMC. Ambit improves the performance of three real-world data-intensive applications, 1) database bitmap indices, 2) BitWeaving, a technique to accelerate database scans, and 3) bit-vector-based implementation of sets, by 3X-7X compared to a state-of-the-art baseline using SIMD optimizations. We describe four other applications that can benefit from Ambit, including a recent technique proposed to speed up web search. We believe that large performance and energy improvements provided by Ambit can enable other applications to use bulk bitwise operations.},
	author = {Vivek Seshadri and Donghyuk Lee and Thomas Mullins and Hasan Hassan and Amirali Boroumand and Jeremie Kim and Michael A. Kozuch and Onur Mutlu and Phillip B. Gibbons and Todd C. Mowry},
	booktitle = {Proceedings of the 50th Annual IEEE/ACM International Symposium on Microarchitecture},
	title = {Ambit: in-memory accelerator for bulk bitwise operations using commodity DRAM technology},
	venue = {Cambridge, MA, USA},
	year = {2017}
}
Proceedings of the 44th Annual International Symposium on Computer Architecture, ISCA 2017, Toronto, ON, Canada, June 2017
@inproceedings{abc,
	author = {Minesh Patel and Jeremie Kim and Onur Mutlu},
	booktitle = {Proceedings of the 44th Annual International Symposium on Computer Architecture, ISCA 2017, Toronto, ON, Canada},
	title = {The Reach Profiler (REAPER): Enabling the Mitigation of DRAM Retention Failures via Profiling at Aggressive Conditions.},
	url = {http://doi.acm.org/10.1145/3079856.3080242},
	year = {2017}
}

2016

CoRR, January 2016
@article{abc,
	author = {Yoongu Kim and Ross Daly and Jeremie Kim and Chris Fallin and Ji-Hye Lee and Donghyuk Lee and Chris Wilkerson and Konrad Lai and Onur Mutlu},
	journal = {CoRR},
	title = {RowHammer: Reliability Analysis and Security Implications.},
	url = {http://arxiv.org/abs/1603.00747},
	year = {2016}
}
CoRR, January 2016
@article{abc,
	author = {Vivek Seshadri and Donghyuk Lee and Thomas Mullins and Hasan Hassan and Amirali Boroumand and Jeremie Kim and Michael A. Kozuch and Onur Mutlu and Phillip B. Gibbons and Todd C. Mowry},
	journal = {CoRR},
	title = {Buddy-RAM: Improving the Performance and Efficiency of Bulk Bitwise Operations Using DRAM.},
	url = {http://arxiv.org/abs/1611.09988},
	year = {2016}
}

2014

ACM/IEEE 41st International Symposium on Computer Architecture, ISCA 2014, Minneapolis, MN, USA, June 2014
@inproceedings{abc,
	author = {Yoongu Kim and Ross Daly and Jeremie Kim and Chris Fallin and Ji-Hye Lee and Donghyuk Lee and Chris Wilkerson and Konrad Lai and Onur Mutlu},
	booktitle = {ACM/IEEE 41st International Symposium on Computer Architecture, ISCA 2014, Minneapolis, MN, USA},
	title = {Flipping bits in memory without accessing them: An experimental study of DRAM disturbance errors.},
	url = {http://dx.doi.org/10.1109/ISCA.2014.6853210},
	year = {2014}
}